| Simulation of dual material ground plane bottom spacer FinFET |
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| Author(s): |
| Pallavi Narware, Dr.Vadthiya Narendar |
| ISSN: |
| 2349-6002 |
| Cite This Article: |
Simulation of dual material ground plane bottom spacer FinFET, International Journal of Innovative Research in Technology(www.ijirt.org) ,ISSN: 2349-6002 ,Volume 5 ,Issue 7 ,Page(s):248-253 ,December 2018 ,Available :IJIRT147362_PAPER.pdf |
| Keywords: |
| FinFET, Self-Heating, Transconductance, Multistage Devices, Threshold Voltage. |
| Abstract |
| FinFETs are popular in complex circuit applications due to excellent scalability and better short channel effects. Bottom spacer FinFET concept is used to achieve improved short-channel and reduced self-heating issues to solve width quantization effect. Fully depleted dual material concept provides novel features like threshold voltage roll-up, transconductance enhancement and suppression of short channel effects by work function engineering. Further, to reduce coupling of electric field between source and drain and hence reducing drain induces barrier lowering (DIBL), ground plane concept is introduced. Figures of merit (FOM) such as transconductance (gm), output conductance (gd), transconductance generation factor (TGF), early voltage (VEA), intrinsic gain (AV), cut-off frequency (fT), transconductance frequency product (TFP), gain frequency product (GFP) and gain transconductance frequency product (GTFP) are systematically presented for different active fin height using 3-D simulation of dual material ground plane bottom spacer FinFET. |
| Article Details |
| Unique Paper ID: 147362 Publication Volume & Issue: Volume 5, Issue 7 Page(s): 248 - 253 |
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