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@article{207508,
        author = {Shailesh Madhav Keshkamat},
        title = {Modeling of the Ferroelectric Field Effect Transistor},
        journal = {International Journal of Innovative Research in Technology},
        year = {2026},
        volume = {13},
        number = {3},
        pages = {1368-1370},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=207508},
        abstract = {With an increase in the demand for microelectronics device there is also a thrust to explore novel device concepts like ferroelectric effects to overcome the limitation of CMOS based circuits. This has brought out to the fore the applications of Ferro-Electric FET (FEFET) which find huge potential in data computing along with global connectivity. However, the FEFET is besought with anomalies dealing with the threshold voltage arising on account of various factors. While few factors are inherently material property dependent, others are incorporated inadvertently due to the processes in fabrication. There is tremendous scope for the enhancement of performance parameters especially the variations of threshold voltage. This paper delves into the modeling of a FEFET, which requires the analysis from both perspectives i.e. the semiconductor along with the ferroelectric material. The Berkeley Short Chanel IGFET Model (BSIM)is used to evaluate various parameters for the semiconductor interface while the Preisach based modeling is used to elaborate upon the interstitial layer of the ferroelectric material. In exploring all these parameters several facets come to the fore, namely the material-based quantities which determine the polarization of the domains, and the operational terms like the applied voltage to enumerate the multi-domain polarization. Likewise, on the semiconductor part of the device the sub threshold leakage current, surface defects which inadvertently occur during fabrication process have to be accounted for in order to ensure that there is uniform distribution of the polarization domains in the ferroelectric material. Furthermore, it would also be interesting to note the behaviour of the device owing to the continuous drive to miniaturize the devices. Moreover, the effects which for now are apparently evaluated in 2 dimensions, could in the near future necessitate the validation using 3 dimensional equations.},
        keywords = {FEFET, BSIM, Preisach, subthreshold leakage, surface defects.},
        month = {August},
        }