Design and analysis of Ring VCO in 32nm CMOS technology and Comparison with LC-VCO in 70 nm CMOS technology on Variation in Power Consumption and Frequency
Author(s):
Manisha Dhakse, Vijay sharma
Keywords:
Current Starved VCO, VCO with Gates of PMOS Transistors Grounded, VCO with PMOS Transistors Diode Connected, VCO with NMOS Transistors Diode Connected, VCO with Voltage Applied to both PMOS and NMOS Transistors, Single Switch LC-VCO, Double Switch LC-VCO and Single Switch with current source LC-VCO.
Abstract
The proposed work depicts the execution assessment of various sorts of ring oscillator Voltage Controlled Oscillator topologies on the premise of two trademark parameters force and recurrence in 32 nm CMOS innovation. The different topologies broke down incorporates Current Starved VCO, VCO with Gates of PMOS Transistor Grounded, VCO with PMOS Diode Connected, VCO with NMOS Diode Connected, VCO with voltage connected to both PMOS and NMOS Transistor. Recreation of various parameters of ring oscillator VCO is done on Tanner apparatus Version 14. VCO topologies are assessed on the premise of recurrence and force utilization by taking lower supply voltage of 1.2 V. Execution assessment and examination of various topologies results in least power utilization of 0.005 nW by VCO with NMOS transistors diode associated topology and most extreme working recurrence of 2 GHz by VCO with Current Starved VCO and correlation with LC-VCO in 70nm CMOS Technology
Article Details
Unique Paper ID: 143839

Publication Volume & Issue: Volume 3, Issue 2

Page(s): 233 - 242
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