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@article{196778,
        author = {Majji Reshith and Dhulipalla Venu Babu and Bitra Sai Kumar and Dasari Naveen Kumar and Pilepu Ashok},
        title = {EXPLICIT PHOTOGAIN THEORY FOR PHOTODIODE VALIDATED BY TCAD SIMULATION},
        journal = {International Journal of Innovative Research in Technology},
        year = {2026},
        volume = {12},
        number = {11},
        pages = {3366-3374},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=196778},
        abstract = {This work presents the design and simulation of an optimized nano-scale photodiode for optical communication systems. Conventional InGaAs photodiodes suffer from efficiency loss due to dead-layer absorption and surface recombination, which reduce photon absorption and responsivity. To address this issue, an Optimized Window Layer Architecture (OWLA) based on a GaAs/InGaAs/InP heterostructure is proposed. The design improves photon penetration by reducing the GaAs window layer thickness and increasing the InGaAs absorber region. Silvaco Technology Computer-Aided Design (TCAD) simulations were used to analyze device performance. The optimized structure achieved a responsivity of 1.008 A/W and external quantum efficiency (EQE) of 96% at 1.3 µm, demonstrating improved photon absorption and carrier collection efficiency for optical communication applications.},
        keywords = {External Quantum Efficiency, InGaAs Photodiode, Optical Communication, OWLA Structure, TCAD Simulation.},
        month = {April},
        }