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@article{151425,
        author = {T.Mani and R.Priya and K.Parveen Banu and P.Reena},
        title = {POWER REDUCTION IN SRAM CELLS USING GATED VDD METHODOLOGY},
        journal = {International Journal of Innovative Research in Technology},
        year = {},
        volume = {7},
        number = {12},
        pages = {670-673},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=151425},
        abstract = {The most significant component of portable battery-operated digital devices is memories.  Since standard SRAM cells consume a lot of capacity, lowering memory power dissipation helps the device work better. In this new age of fast mobile computing, traditional SRAM cell designs are power hungry and underperforming. A static RAM with a low power consumption. The Gated VDD technique is used to investigate cell architecture. The SRAM cell's power consumption has been reduced using gated VDD and MTCMOS architecture techniques. In terms of power consumption and write delay, the results show that the MTCMOS-based SRAM cell is the best performer. Simulations are run on the Cadence Virtuoso tool, which uses 180nm technology.},
        keywords = {},
        month = {},
        }