Coupling compensation technique for Latch type sense amplifier in high speed low power SRAM |
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Author(s): |
M.Raviteja, N.Gowtham Kumar reddy, P.Mahesh reddy, P.Maneesh reddy, MR. BARATHI DHASAN.D |
ISSN: |
2349-6002 |
Cite This Article: |
Coupling compensation technique for Latch type sense amplifier in high speed low power SRAM, International Journal of Innovative Research in Technology(www.ijirt.org) ,ISSN: 2349-6002 ,Volume 5 ,Issue 10 ,Page(s):314-318 ,March 2019 ,Available :IJIRT147718_PAPER.pdf |
Keywords: |
Voltage sense amplifier, multi-inputs, voltage transition, node stabilization, and biasing circuits. |
Abstract |
This paper discusses the undesirable charge transfer through the parasitic capacitances of the input transistors in a multi-inputs voltage sense amplifier. Its intrinsic rail-to-rail voltage transitions at the output nodes inevitably disturb the input sides through the capacitive coupling between the outputs and inputs. Then, it can possible degrade the stabilities of the reference voltage levels. Moreover, it becomes more serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the overall systems. In order to alleviate the internal node voltage transition, the internal node stabilization techniques are proposed. It achieves 45% and 40% improvements for node stabilization and input referred disturbance, respectively. |
Article Details |
Unique Paper ID: 147718 Publication Volume & Issue: Volume 5, Issue 10 Page(s): 314 - 318 |
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