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Growth and Electrical Studies of SbSeI

  • Unique Paper ID: 164821
  • Volume: 10
  • Issue: 12
  • PageNo: 2761-2764
  • Abstract:
  • Needle-shaped shiny polycrystalline SbSeI was grown by Solid State Thermal Reaction of constituent elements taken in stoichiometric ratio in an evacuated quartz tube at 585 oC for 3.5 hours. The obtained compound was characterized by SEM, EDAX, and XRD techniques. The resistance vs. temperature curve exhibits the semiconducting nature of the compound with a resistivity of 3.5 x 107 Ω-cm, an activation energy of 1.93 eV, and a dielectric constant of 10434. The photoconductive trait of the compound was studied in the visible region
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  • ISSN: 2349-6002
  • Volume: 10
  • Issue: 12
  • PageNo: 2761-2764

Growth and Electrical Studies of SbSeI

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