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Effect of impurities on the nanostructure formation on Ge(100) substrate by 26 keV ion implantation

  • Unique Paper ID: 166600
  • Volume: 10
  • Issue: 3
  • PageNo: 653-658
  • Abstract:
  • In this study a comparison of the 26 keV Si^- and Au^- ion implantation on Ge (100) substrate at room temperature for the ion fluence of 1×10^18 ions/cm^2. The study demonstrates that the implantation of Si ions at near normal incidence results in the formation of pit structures on the Ge substrate, whereas the implantation of Au ions produces dot structures. Au ion bombardment can produce a grating-like rippled surface that is highly ordered at an off-normal angle of 60°; however, Si^- ions do not exhibit any such ordered ripples. Au ion bombardment can generate beautiful highly ordered grating-like rippled surface but no such ordered ripples are found for Si^- ions. A subsequent investigation was conducted by incorporating silver atoms into the Si^- ion bombardment of the Ge substrate. The nanostructuring process is improved by the introduction of Ag atoms during the Si^- ion bombardment of the Ge substrate.
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  • ISSN: 2349-6002
  • Volume: 10
  • Issue: 3
  • PageNo: 653-658

Effect of impurities on the nanostructure formation on Ge(100) substrate by 26 keV ion implantation

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