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@article{142406,
        author = {SANJEEV KUMAR SINGH and Mr. Vishal Moyal},
        title = {Two Dimensional Analytical Threshold Voltages Modeling for Short-Channel MOSFET},
        journal = {International Journal of Innovative Research in Technology},
        year = {},
        volume = {2},
        number = {1},
        pages = {304-310},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=142406},
        abstract = {The aim of this paper is to research the impact of physical parameters which characterize the MOSFET transistors structure on the threshold voltage value. It will also analyse the role of substrate (the body effect) of MOSFETs on the threshold voltage. The MOSFET threshold voltage value has influenced in the dynamic and static work regime (mode) of device. Based on the outcome obtained and further observe impact of each single physical parameter on the total value of threshold voltage. Besides it can be observe which of these parameters would have significant and small impact on the threshold voltage. Hence, considering set the values of MOSFET physical parameters to reach the accepted threshold voltage. In this paper an analytical model for threshold voltage of short-channel MOSFETs is purposed. For such devices, the depletion regions due to source/drain junctions occupy a large portion of the channel, and hence are very important for precise Analytical threshold voltage modeling. The proposed analytical model can calculate the threshold voltage variation drain induced barrier lowering (DIBL) effect and hence, the threshold voltage roll-off natures quite accurately. The model results are verified against the simulator MATLAB.},
        keywords = {MATLAB, DIBL, MOSFETs.},
        month = {},
        }