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@article{185165,
        author = {Rajesh P. Vansdadiya and Pankaj R. Gondaliya and Nimish H. Vasoya},
        title = {Materials for High-Speed Connectivity: The Revolution of 5G},
        journal = {International Journal of Innovative Research in Technology},
        year = {2025},
        volume = {12},
        number = {5},
        pages = {552-561},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=185165},
        abstract = {The introduction of 5G technology marks a new era in telecommunications that is distinguished by exceptionally high data transfer rates, low latency, and the ability to connect a greater number of devices simultaneously. The aim of this research is to analyze primary factors and concepts that are driving the 5th generation revolution. It covers the role of upcoming semiconductors such as Gallium Nitride (GaN) and Silicon Germanium (SiGe), which are critical to the 5G network's high frequency and power performance. The development of antenna materials is followed by research through the advanced plastic and composite enabling huge MIMO systems and small lightweight antennas. It focuses on the application of metamaterials for beamforming, and the role of optical fibers in the backhaul network for improving data transmission. These materials selective to their technical and economic aspects are analyzed to understand their impact on the scalability, sustainability, and effectiveness of 5G wireless communication networks and setting the scene for new innovation in this field.},
        keywords = {5G Materials; High-Frequency Materials; Metamaterials; Semiconductor Innovations; Dielectric Properties; Photonics in Telecommunications},
        month = {October},
        }