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@article{186167,
        author = {Vinod Kumar Lodhi and Prof. Dr. Arvind Kumar},
        title = {Nanostructured Gallium Nitride (GaN) for Next-Generation Optoelectronics: Efficiency Enhancement, Thermal Management, and Quantum Confinement Effects},
        journal = {International Journal of Innovative Research in Technology},
        year = {2025},
        volume = {12},
        number = {6},
        pages = {3632-3638},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=186167},
        abstract = {Gallium Nitride (GaN) nanostructures have emerged as a cornerstone of modern optoelectronics due to their unique electrical, optical, and thermal properties. The present study investigates the role of GaN nanostructures including nanowires, nanorods, and quantum dots in enhancing device efficiency, managing heat dissipation, and exploiting quantum confinement effects for improved emission characteristics. By integrating advanced fabrication techniques such as Metal-Organic Chemical Vapor Deposition (MOCVD) and Molecular Beam Epitaxy (MBE), this work presents a comprehensive analysis of GaN’s performance across light-emitting diodes (LEDs), photonic devices, and high-power transistors. The findings demonstrate that GaN nanostructuring leads to significant improvement in luminous efficiency (>200 lm/W), reduced defect densities, and enhanced thermal stability marking it as a material of choice for next-generation optoelectronics.)},
        keywords = {GaN Nanostructures, Quantum Confinement, Thermal Management, Optoelectronics, LEDs, MOCVD, Efficiency Enhancement.},
        month = {November},
        }