Copyright © 2026 Authors retain the copyright of this article. This article is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

@article{202926,
        author = {Avantika Tyagi and Dr. Mohit Kumar},
        title = {A REVIEW ON THE ELECTRICAL PROPERTIES OF SILICON SEMICONDUCTORS},
        journal = {International Journal of Innovative Research in Technology},
        year = {2026},
        volume = {12},
        number = {12},
        pages = {9819-9821},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=202926},
        abstract = {Semiconductor materials are fundamental to modern electronic systems due to their tunable electrical properties and broad scope of application. Their conductivity lies between that of a conductor and an insulator, making them suitable for devices in computing and communication. This review analyses key electrical characteristics of commonly used semiconductors, focusing on carrier concentration, mobility, and the Hall effect in silicon and germanium.
The paper outlines the behaviour of intrinsic semiconductors and explains how n-type and p-type materials are formed through controlled impurity doping. Experimental data show that semiconductor conductivity rises with temperature, and the addition of dopants significantly alters carrier density and device performance. The impact of impurities on electrical response and thermal efficiency is also examined.},
        keywords = {Semiconductor Materials •	Types of semiconductors •	Electrical Properties •	Conductivity •	Charge Carrier Mobility •	Hall effect},
        month = {May},
        }