| AlGaN/GaN based HEMT Device for High Power Applications |
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| Author(s): |
| Kajal Jain, Shivani Saxena |
| ISSN: |
| 2349-6002 |
| Cite This Article: |
AlGaN/GaN based HEMT Device for High Power Applications, International Journal of Innovative Research in Technology(www.ijirt.org) ,ISSN: 2349-6002 ,Volume 5 ,Issue 11 ,Page(s):274-278 ,April 2019 ,Available :IJIRT147912_PAPER.pdf |
| Keywords: |
| AlGaN/GaN, HEMTs, hetero-structure,Wide band gap material, Silvaco. |
| Abstract |
| AlGaN/GaN High Electron Mobility Transistors (HEMTs) have wide bandgap and therefore, it offers to be used at higher output power than other III-V semiconductor devices. As compared to conventional semiconductor materials, these wide bandgap materials have several modeling constraints and fabrication challenges. This paper models the complex fabrication process flow of HEMT device in simpler way that will be used at high power applications. In addition, Choice of materials for each layer with layered structure is also presented. A comparative study in between conventional Si based transistor and HEMT is also included here. |
| Article Details |
| Unique Paper ID: 147912 Publication Volume & Issue: Volume 5, Issue 11 Page(s): 274 - 278 |
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