AlGaN/GaN based HEMT Device for High Power Applications

AlGaN/GaN based HEMT Device for High Power Applications
Author(s):
Kajal Jain, Shivani Saxena
ISSN:
2349-6002
Cite This Article:
AlGaN/GaN based HEMT Device for High Power Applications, International Journal of Innovative Research in Technology(www.ijirt.org) ,ISSN: 2349-6002 ,Volume 5 ,Issue 11 ,Page(s):274-278 ,April 2019 ,Available :IJIRT147912_PAPER.pdf
Keywords:
AlGaN/GaN, HEMTs, hetero-structure,Wide band gap material, Silvaco.
Abstract
AlGaN/GaN High Electron Mobility Transistors (HEMTs) have wide bandgap and therefore, it offers to be used at higher output power than other III-V semiconductor devices. As compared to conventional semiconductor materials, these wide bandgap materials have several modeling constraints and fabrication challenges. This paper models the complex fabrication process flow of HEMT device in simpler way that will be used at high power applications. In addition, Choice of materials for each layer with layered structure is also presented. A comparative study in between conventional Si based transistor and HEMT is also included here.
Article Details
Unique Paper ID: 147912 Publication Volume & Issue: Volume 5, Issue 11 Page(s): 274 - 278
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International Journal of Innovative Research in Technology