AlGaN/GaN based HEMT Device for High Power Applications

Kajal Jain; Shivani Saxena

AlGaN/GaN based HEMT Device for High Power Applications

Authors: Kajal Jain, Shivani Saxena

Unique Paper ID: 147912
Volume: 5
Issue: 11
PageNo: 274-278

Keywords: AlGaN/GaN HEMTs hetero-structure Wide band gap material Silvaco.

Abstract:
AlGaN/GaN High Electron Mobility Transistors (HEMTs) have wide bandgap and therefore, it offers to be used at higher output power than other III-V semiconductor devices. As compared to conventional semiconductor materials, these wide bandgap materials have several modeling constraints and fabrication challenges. This paper models the complex fabrication process flow of HEMT device in simpler way that will be used at high power applications. In addition, Choice of materials for each layer with layered structure is also presented. A comparative study in between conventional Si based transistor and HEMT is also included here.

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Cite This Article

ISSN: 2349-6002
Volume: 5
Issue: 11
PageNo: 274-278

AlGaN/GaN based HEMT Device for High Power Applications

Available:https://ijirt.org/Article?manuscript=147912

Impact Factor
8.01 (Year 2024)

UGC Approved
Journal no 47859

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