Ananlyis and design of fin fet base of alu
Sushmita Mahan
FINFET, Leakage Power, Back Biasing, Independent gate circuit.
ALU is the core of all microprocessors. It also a combination of logic blocks to perform the logical or arithmetic operations. Now a days ALU is getting more complex and smaller in size to make the development of smaller and most powerful computer systems. This project designs An ALU using MOSFET as a conventional method. In conventional ALU consumes a large amount of power and also consist some limitations during scaling down such as short channel effects, gate dielectric leakage etc. The proposed ALU designed with a FINFET. It has powerful control on short channel effects while scale down the size of the transistor. The design simulation is carried out in TANNER EDA V13.0 version tools. Finally power has been studied and also compared between the ALU designed using MOSFET with proposed FINFET based design of ALU.
Article Details
Unique Paper ID: 146778

Publication Volume & Issue: Volume 5, Issue 1

Page(s): 958 - 963
Article Preview & Download

Share This Article

Join our RMS

Conference Alert

NCSEM 2024

National Conference on Sustainable Engineering and Management - 2024

Last Date: 15th March 2024

Call For Paper

Volume 11 Issue 1

Last Date for paper submitting for Latest Issue is 25 June 2024

About Us enables door in research by providing high quality research articles in open access market.

Send us any query related to your research on

Social Media

Google Verified Reviews