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@article{169080,
        author = {Bhoora Ram},
        title = {Design of Low Cost and Highly Efficient Un-doped Carrier Selective Heterocontact Solar Cells with SiO2 as Surface Passivation},
        journal = {International Journal of Innovative Research in Technology},
        year = {2024},
        volume = {11},
        number = {6},
        pages = {272-277},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=169080},
        abstract = {Photovoltaic (PV) technology, which converts light into electricity, can assist to meet rising energy demands. c-Si solar cells have a market share of approximately 95% and an efficiency range of 20% to 25%, which is less than the theoretical limit of 29.43% but has a longer reliability of more than 20 years. Low efficiency is caused by optical, recombination, and spectral losses, as well as parasitic absorption and Auger recombination. SHJ technology, which uses n-a-Si:H and p-a-Si:H as carrier-selective contacts and i-a-Si:H as surface passivation, achieves a high efficiency of 26.7%. However, placing doped a-Si contacts at high temperatures is challenging and produces hazardous vapors. Transition metal oxide (TMO) passivated contacts can be employed as an alternative material, with efficiencies of 24.75% and a potential of more than 28.4%. TMO's asymmetric hetero-contacts, carrier transport methods, material property optimization, and perspective can increase passivation and efficiency while lowering manufacturing costs and providing a levelized energy cost to society.},
        keywords = {c-Si solar cells, carrier-selective heterocontacts, surface passivation, transition metal oxide (TMO)},
        month = {November},
        }