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Design of Low Cost and Highly Efficient Un-doped Carrier Selective Heterocontact Solar Cells with SiO2 as Surface Passivation

  • Unique Paper ID: 169080
  • Volume: 11
  • Issue: 6
  • PageNo: 272-277
  • Abstract:
  • Photovoltaic (PV) technology, which converts light into electricity, can assist to meet rising energy demands. c-Si solar cells have a market share of approximately 95% and an efficiency range of 20% to 25%, which is less than the theoretical limit of 29.43% but has a longer reliability of more than 20 years. Low efficiency is caused by optical, recombination, and spectral losses, as well as parasitic absorption and Auger recombination. SHJ technology, which uses n-a-Si:H and p-a-Si:H as carrier-selective contacts and i-a-Si:H as surface passivation, achieves a high efficiency of 26.7%. However, placing doped a-Si contacts at high temperatures is challenging and produces hazardous vapors. Transition metal oxide (TMO) passivated contacts can be employed as an alternative material, with efficiencies of 24.75% and a potential of more than 28.4%. TMO's asymmetric hetero-contacts, carrier transport methods, material property optimization, and perspective can increase passivation and efficiency while lowering manufacturing costs and providing a levelized energy cost to society.
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Cite This Article

  • ISSN: 2349-6002
  • Volume: 11
  • Issue: 6
  • PageNo: 272-277

Design of Low Cost and Highly Efficient Un-doped Carrier Selective Heterocontact Solar Cells with SiO2 as Surface Passivation

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Journal no 47859

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