Design of ring VCO based PLL using 0.25 µm CMOS technology

  • Unique Paper ID: 143290
  • PageNo: 52-56
  • Abstract:
  • A low power ring VCO based PLL using injection locking is realized by adopting 0.25µm CMOS technology at 2.5V. We have achieved a shift in the bias level by using pMOS active resistive load. The PLL output frequency is 104.4 MHz, at 5 MHz reference frequency by using injection locking based VCO and active resistive load managed to achieve low power dissipation of 4.98mW at 2.5 V.

Copyright & License

Copyright © 2026 Authors retain the copyright of this article. This article is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

BibTeX

@article{143290,
        author = {Ritika Tiwari and Vijay Sharma and Megha Soni},
        title = {Design of ring VCO based PLL using 0.25 µm CMOS technology},
        journal = {International Journal of Innovative Research in Technology},
        year = {},
        volume = {2},
        number = {9},
        pages = {52-56},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=143290},
        abstract = {A low power ring VCO based PLL using injection locking is realized by adopting 0.25µm CMOS technology at 2.5V. We have achieved a shift in the bias level by using pMOS active resistive load. The PLL output frequency is 104.4 MHz, at 5 MHz reference frequency by using injection locking based VCO and active resistive load managed to achieve low power dissipation of 4.98mW at 2.5 V.},
        keywords = {Phase Locked Loop, Injection Locking, Ring VCO, Shift Bias Level.},
        month = {},
        }

Cite This Article

Tiwari, R., & Sharma, V., & Soni, M. (). Design of ring VCO based PLL using 0.25 µm CMOS technology. International Journal of Innovative Research in Technology (IJIRT), 2(9), 52–56.

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