Design and analysis of Ring VCO in 32nm CMOS technology and Comparison with LC-VCO in 70 nm CMOS technology on Variation in Power Consumption and Frequency

  • Unique Paper ID: 143839
  • PageNo: 233-242
  • Abstract:
  • The proposed work depicts the execution assessment of various sorts of ring oscillator Voltage Controlled Oscillator topologies on the premise of two trademark parameters force and recurrence in 32 nm CMOS innovation. The different topologies broke down incorporates Current Starved VCO, VCO with Gates of PMOS Transistor Grounded, VCO with PMOS Diode Connected, VCO with NMOS Diode Connected, VCO with voltage connected to both PMOS and NMOS Transistor. Recreation of various parameters of ring oscillator VCO is done on Tanner apparatus Version 14. VCO topologies are assessed on the premise of recurrence and force utilization by taking lower supply voltage of 1.2 V. Execution assessment and examination of various topologies results in least power utilization of 0.005 nW by VCO with NMOS transistors diode associated topology and most extreme working recurrence of 2 GHz by VCO with Current Starved VCO and correlation with LC-VCO in 70nm CMOS Technology

Copyright & License

Copyright © 2026 Authors retain the copyright of this article. This article is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

BibTeX

@article{143839,
        author = {Manisha Dhakse and Vijay sharma},
        title = {Design and analysis of Ring VCO in 32nm CMOS technology and Comparison with LC-VCO in 70 nm CMOS technology on Variation in Power Consumption and Frequency},
        journal = {International Journal of Innovative Research in Technology},
        year = {},
        volume = {3},
        number = {2},
        pages = {233-242},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=143839},
        abstract = {The proposed work depicts the execution assessment of various sorts of ring oscillator Voltage Controlled Oscillator topologies on the premise of two trademark parameters force and recurrence in 32 nm CMOS innovation. The different topologies broke down incorporates Current Starved VCO, VCO with Gates of PMOS Transistor Grounded, VCO with PMOS Diode Connected, VCO with NMOS Diode Connected, VCO with voltage connected to both PMOS and NMOS Transistor. Recreation of various parameters of ring oscillator VCO is done on Tanner apparatus Version 14. VCO topologies are assessed on the premise of recurrence and force utilization by taking lower supply voltage of 1.2 V. Execution assessment and examination of various topologies results in least power utilization of 0.005 nW by VCO with NMOS transistors diode associated topology and most extreme working recurrence of 2 GHz by VCO with Current Starved VCO and correlation with LC-VCO in 70nm CMOS Technology},
        keywords = {Current Starved VCO, VCO with Gates of PMOS Transistors Grounded, VCO with PMOS Transistors Diode Connected, VCO with NMOS Transistors Diode Connected, VCO with Voltage Applied to both PMOS and NMOS Transistors, Single Switch LC-VCO, Double Switch LC-VCO and Single Switch with current source LC-VCO.},
        month = {},
        }

Cite This Article

Dhakse, M., & sharma, V. (). Design and analysis of Ring VCO in 32nm CMOS technology and Comparison with LC-VCO in 70 nm CMOS technology on Variation in Power Consumption and Frequency. International Journal of Innovative Research in Technology (IJIRT), 3(2), 233–242.

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