FTIR Studies of buried silicon oxynitride layers synthesized by sequential oxygen/nitrogen ion implantation in silicon

  • Unique Paper ID: 181777
  • Volume: 12
  • Issue: 1
  • PageNo: 5443-5446
  • Abstract:
  • No Abstract Found

Copyright & License

Copyright © 2025 Authors retain the copyright of this article. This article is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

BibTeX

@article{181777,
        author = {A.P.Patel},
        title = {FTIR Studies of buried silicon oxynitride layers synthesized by sequential oxygen/nitrogen ion implantation in silicon},
        journal = {International Journal of Innovative Research in Technology},
        year = {2025},
        volume = {12},
        number = {1},
        pages = {5443-5446},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=181777},
        abstract = {},
        keywords = {Buried, FTIR, Silicon Nitrate, Implantation},
        month = {June},
        }

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