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@article{182492,
        author = {Mr. G. Haribabu and Mr. Vijayakumar. P and Mr. K. karthikeyan and Priti Kashiram Ghuge},
        title = {Performance Analysis of Silicon and Germanium Diodes in Low-Frequency Rectifier Circuits},
        journal = {International Journal of Innovative Research in Technology},
        year = {2025},
        volume = {12},
        number = {2},
        pages = {2162-2163},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=182492},
        abstract = {This paper presents a comparative study of silicon and germanium diodes in half-wave and full-wave rectifier circuits operating at low frequencies. Key parameters such as forward voltage drop, peak inverse voltage (PIV), ripple factor, and efficiency were analysed using simulation and experimental methods. The results show that while germanium diodes offer lower forward voltage drop, silicon diodes exhibit higher reliability and better performance under reverse-bias conditions. This study provides a reference for selecting appropriate diode types in low-frequency power supply designs and electronic applications.},
        keywords = {Silicon diode, Germanium diode, Half-wave rectifier, Full-wave rectifier, Ripple factor, Efficiency.},
        month = {July},
        }