Performance Analysis of Silicon and Germanium Diodes in Low-Frequency Rectifier Circuits

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Mr. G. Haribabu; Mr. Vijayakumar. P; Mr. K. karthikeyan; Priti Kashiram Ghuge

Performance Analysis of Silicon and Germanium Diodes in Low-Frequency Rectifier Circuits

Authors: Mr. G. Haribabu, Mr. Vijayakumar. P, Mr. K. karthikeyan, Priti Kashiram Ghuge

Unique Paper ID: 182492
Volume: 12
Issue: 2
PageNo: 2162-2163

Keywords: Silicon diode Germanium diode Half-wave rectifier Full-wave rectifier Ripple factor Efficiency.

Abstract:
This paper presents a comparative study of silicon and germanium diodes in half-wave and full-wave rectifier circuits operating at low frequencies. Key parameters such as forward voltage drop, peak inverse voltage (PIV), ripple factor, and efficiency were analysed using simulation and experimental methods. The results show that while germanium diodes offer lower forward voltage drop, silicon diodes exhibit higher reliability and better performance under reverse-bias conditions. This study provides a reference for selecting appropriate diode types in low-frequency power supply designs and electronic applications.

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Cite This Article

ISSN: 2349-6002
Volume: 12
Issue: 2
PageNo: 2162-2163

Performance Analysis of Silicon and Germanium Diodes in Low-Frequency Rectifier Circuits

Available:https://ijirt.org/Article?manuscript=182492

Impact Factor
8.01 (Year 2024)

UGC Approved
Journal no 47859

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