Defect Engineering in SnO₂ through Nb and Y Doping for High-Performance Dye-Sensitized Solar Cells

  • Unique Paper ID: 188708
  • PageNo: 3174-3180
  • Abstract:
  • No Abstract Found

Copyright & License

Copyright © 2026 Authors retain the copyright of this article. This article is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

BibTeX

@article{188708,
        author = {Sambhaji S. Bhande},
        title = {Defect Engineering in SnO₂ through Nb and Y Doping for High-Performance Dye-Sensitized Solar Cells},
        journal = {International Journal of Innovative Research in Technology},
        year = {2025},
        volume = {12},
        number = {7},
        pages = {3174-3180},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=188708},
        abstract = {},
        keywords = {},
        month = {December},
        }

Cite This Article

Bhande, S. S. (2025). Defect Engineering in SnO₂ through Nb and Y Doping for High-Performance Dye-Sensitized Solar Cells. International Journal of Innovative Research in Technology (IJIRT), 12(7), 3174–3180.

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