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@article{189344,
        author = {SWATI ARORA and SATYENDRA KUMAR},
        title = {Investigation of ZnO thin film characteristics Fabricated as Buffer Layer for CIGS Thin-Film Solar Cell},
        journal = {International Journal of Innovative Research in Technology},
        year = {2025},
        volume = {12},
        number = {7},
        pages = {5723-5727},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=189344},
        abstract = {In this study, investigation of the ZnO thin film characteristics deposited in between transparent conductive oxide  and the CdS films layers in a CIGS solar cell (AZO/ZnO/CdS/CIGS/Mo),of various  thicknesses have been deposited by the solution-based fabrication technique  to get better performance of CIGS thin-film solar cells. The exchange efficiency of CIGS solar cell depends on ZnO thin film. There is significant work and progresses have seen in photovoltaic (PV) for alteration of solar energy into electrical energy and its storage.  It had observed Shockley–Queisser (SQ) limit as a setback for the simple pn-junction solar cell. Though most of the practical solar cells suffer from band interface mismatch, energy defects, radiative, non-radiative recombination losses and so could not attain the SQ limit of 34% efficiency. While advances in modeling of materials and technological developments results into multiple junctions, intermediate band, photon up and down conversion (PUC) solar cells which have shown great potential to overcome the SQ limit and could achieve up to 88% efficiency. In this paper most of the contributing parameters of thin film solar cell has been emphasized.},
        keywords = {Thin-film, Photo Voltaic, Efficiency, Shockley–Queisser (SQ), Conduction Band Offset (CBO), CIGS solar cell.},
        month = {December},
        }