Preparation and Characterization of BaBiO3 Thin Films by Chemical Vapor Deposition Method.
Dr. Vijay R. Chinchamalatpure, Dr. Nilesh R.Thakare
BaBiO3, Chemical Vapor Deposition Method, Electrical Conductivity., SEM, XRD
BaBiO3 (BBO) thin films were synthesized and deposited on Si (100) substrates by Chemical Vapor Deposition Method using an oxygen radical source in order to oxidize the films. The oxygen radical source was operated at r. f. power of 600 W. The background pressure during the deposition was 5x 10-5 Torr. The SEM of BaBiO3 shows that the film as deposited is opaque and itrevealed a high degree of porosity, after annealing crystallization increases. The X-Ray diffraction shows that the diffraction peaks are sharp with increasing temperature which enhance the crystallinity of the films. The FTIR Spectra of BaBiO3 annealed at 6000C shows the intense band at the edge of detection is assigned to Bi-O mode. Optical spectroscopy showed presence of a direct band gap of 2.4 eV. This combined with determination of the activation energy for conduction of 0.27eV, as obtained from ac impedance spectroscopy, increase in the conductivity in the lower temperature region can be attributed to the increase in charge mobility. This result suggests that the oxygen radical is effective for the formation of BaBiO3 films.
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Unique Paper ID: 161689

Publication Volume & Issue: Volume 10, Issue 5

Page(s): 389 - 392
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