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FTIR Studies of buried silicon oxynitride layers synthesized by sequential oxygen/nitrogen ion implantation in silicon

  • Unique Paper ID: 181777
  • Volume: 12
  • Issue: 1
  • PageNo: 5443-5446
  • Abstract:
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  • ISSN: 2349-6002
  • Volume: 12
  • Issue: 1
  • PageNo: 5443-5446

FTIR Studies of buried silicon oxynitride layers synthesized by sequential oxygen/nitrogen ion implantation in silicon

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UGC Approved
Journal no 47859

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