Structural study of buried nitride layers synthesized by SIMNI process
A. P. Patel
Buried, FTIR, Silicon Nitrate, Implantation.
Silicon nitride (SiN) buried layers were synthesized by SIMNI process using 140 keV (14N+) ion implantation at high fluence levels ranging from 1.0×1017 to 5.0×1017 cm-2 into <111> single crystal silicon substrates at high temperature (410 0C). The samples were annealed at 1200 °C for 60 minutes in argon ambient The FTIR spectra of samples reveal absorption band associated with the stretching vibration of Si-N bonds indicating the formation of silicon nitride. The transmission studies show that the annealing of the samples shifts all the IR peaks towards higher frequencies and the bands become sharper. The shift of the IR transmission band towards higher frequencies after annealing is due to release of bond strain which was introduced into Si3N4 film during implantation.
Article Details
Unique Paper ID: 153169

Publication Volume & Issue: Volume 8, Issue 6

Page(s): 10 - 12
Article Preview & Download

Share This Article

Join our RMS

Conference Alert

NCSEM 2024

National Conference on Sustainable Engineering and Management - 2024

Last Date: 15th March 2024

Call For Paper

Volume 11 Issue 1

Last Date for paper submitting for Latest Issue is 25 June 2024

About Us enables door in research by providing high quality research articles in open access market.

Send us any query related to your research on

Social Media

Google Verified Reviews