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Structural study of buried nitride layers synthesized by SIMNI process

  • Unique Paper ID: 153169
  • Volume: 8
  • Issue: 6
  • PageNo: 10-12
  • Abstract:
  • Silicon nitride (SiN) buried layers were synthesized by SIMNI process using 140 keV (14N+) ion implantation at high fluence levels ranging from 1.0×1017 to 5.0×1017 cm-2 into <111> single crystal silicon substrates at high temperature (410 0C). The samples were annealed at 1200 °C for 60 minutes in argon ambient The FTIR spectra of samples reveal absorption band associated with the stretching vibration of Si-N bonds indicating the formation of silicon nitride. The transmission studies show that the annealing of the samples shifts all the IR peaks towards higher frequencies and the bands become sharper. The shift of the IR transmission band towards higher frequencies after annealing is due to release of bond strain which was introduced into Si3N4 film during implantation.
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  • ISSN: 2349-6002
  • Volume: 8
  • Issue: 6
  • PageNo: 10-12

Structural study of buried nitride layers synthesized by SIMNI process

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