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@article{161103,
        author = {Shailesh Madhav Keshkamat},
        title = {MOSFETs’ Technology – Linear and Planar to Hydrogen Terminated Non – Planar Devices },
        journal = {International Journal of Innovative Research in Technology},
        year = {},
        volume = {10},
        number = {2},
        pages = {610-612},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=161103},
        abstract = {This paper presents a review of the development of SOI – MOSFET from Single Gate (SG)  and Multiple Gate (MG) devices to the Hydrogen Terminated Diamond Transistor (HTDT) Structures. The physical structure of Double and Triple gate SOI – MOSFET is discussed along with the operation, advantages and drawbacks. The promising features of HTDT devices are also discussed with an objective of gaining a deeper insight into their futuristic developments.},
        keywords = {HTDT, MG SOI – MOSFET.},
        month = {},
        }