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@article{179718,
        author = {MUTHURAMAN S and Dr P Deepa},
        title = {DOUBLE NODE UPSET RHBD 12T SRAM CELL},
        journal = {International Journal of Innovative Research in Technology},
        year = {2025},
        volume = {11},
        number = {12},
        pages = {8794-8801},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=179718},
        abstract = {Radiation-hardened SRAM is a crucial memory technology developed for reliable operation in harsh, high-radiation environments like space and nuclear power plants, as traditional SRAM is susceptible to radiation-induced data corruption from single-event upsets (SEUs) and double-node upsets (DNUs). To address these challenges, the Radiation- Hardened by Design (RHBD) 12T SRAM cell is proposed in this paper to offer a robust solution. This architecture incorporates two interconnected latch circuits configured in a self-recovering feedback mechanism to mitigate the risk of data corruption. The feedback mechanism restores disrupted storage nodes to their original state, ensuring data integrity even under DNUs. The RHBD 12T SRAM cell, balances redundancy and isolation for enhanced resilience. RHBT 12T SRAM cell is simulated for write, read, and hold operations to evaluate its robustness against radiation-induced faults. Simulation in the Cadence analog design at 45nm technology validates its performance. The RHBD 12T SRAM cell demonstrates improved fault tolerance, minimal transistor count, and efficient power consumption, making it a reliable choice for applications in radiation-prone environments like space.},
        keywords = {Double node upset (DNU), Static Noise Margin (SNM), Monto carlo Analysis, Dynamic Power, Static Power, Corner Analysis.},
        month = {May},
        }