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@article{202889,
        author = {Vishnu Vaibhav S and Dr.Vijayalakshmi},
        title = {Design Modeling of MEMS based Pyramidal Gate structure for CNTFET Based Sensor},
        journal = {International Journal of Innovative Research in Technology},
        year = {2026},
        volume = {12},
        number = {12},
        pages = {9838-9844},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=202889},
        abstract = {This work presents the design and simulation of a MEMS-based pyramidal gate structure for potential nanoelectronics sensing applications. The structure is developed and analyzed using COMSOL Multiphysics to investigate its mechanical and electrostatic response under applied pressure. The pyramidal geometry is chosen to enable non-uniform stress distribution and localized deformation characteristics.
Pressure-dependent analysis is performed to evaluate structural deformation and its effect on the resulting field distribution. The performed simulations suggest that pyramidal structure exhibits enhanced stress concentration near the apex, leading to measurable variations in its response with applied load. These characteristics indicate that the proposed geometry is suitable for pressure-sensitive applications and can be effectively utilized as a functional gate structure in MEMS-based sensing platforms.},
        keywords = {MEMS, Pyramidal Gate Structure, Pressure Sensing, Structural Deformation, Electrostatic Analysis, Finite Element Modeling (FEM), COMSOL Multiphysics, Stress Concentration, Micro/Nano Structures, Sensor Design.},
        month = {May},
        }