MOSFETs’ Technology – Linear and Planar to Hydrogen Terminated Non – Planar Devices
Shailesh Madhav Keshkamat
This paper presents a review of the development of SOI – MOSFET from Single Gate (SG) and Multiple Gate (MG) devices to the Hydrogen Terminated Diamond Transistor (HTDT) Structures. The physical structure of Double and Triple gate SOI – MOSFET is discussed along with the operation, advantages and drawbacks. The promising features of HTDT devices are also discussed with an objective of gaining a deeper insight into their futuristic developments.
Article Details
Unique Paper ID: 161103

Publication Volume & Issue: Volume 10, Issue 2

Page(s): 610 - 612
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