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MOSFETs’ Technology – Linear and Planar to Hydrogen Terminated Non – Planar Devices

  • Unique Paper ID: 161103
  • Volume: 10
  • Issue: 2
  • PageNo: 610-612
  • Abstract:
  • This paper presents a review of the development of SOI – MOSFET from Single Gate (SG) and Multiple Gate (MG) devices to the Hydrogen Terminated Diamond Transistor (HTDT) Structures. The physical structure of Double and Triple gate SOI – MOSFET is discussed along with the operation, advantages and drawbacks. The promising features of HTDT devices are also discussed with an objective of gaining a deeper insight into their futuristic developments.
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  • ISSN: 2349-6002
  • Volume: 10
  • Issue: 2
  • PageNo: 610-612

MOSFETs’ Technology – Linear and Planar to Hydrogen Terminated Non – Planar Devices

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Journal no 47859

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