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@article{184862,
        author = {SHAIK ABDUL KHAYUM and G MAHENDRA},
        title = {Performance Benchmarking of Cryo-CMOS Embedded SRAM and DRAM in 40nm CMOS Technology},
        journal = {International Journal of Innovative Research in Technology},
        year = {2025},
        volume = {12},
        number = {4},
        pages = {3237-3241},
        issn = {2349-6002},
        url = {https://ijirt.org/article?manuscript=184862},
        abstract = {Cryogenic Complementary Metal-Oxide-Semiconductor (Cryo-CMOS) technology has recently gained significant attention as an enabling platform for quantum computing and ultra-low temperature electronic systems. Embedded memory, particularly Static Random Access Memory (SRAM) and Dynamic Random Access Memory (DRAM), forms a critical component in such systems, where performance, energy efficiency, and reliability at cryogenic temperatures are of paramount importance. This work presents a comprehensive performance benchmarking of embedded SRAM and DRAM designed in a 40nm CMOS process for cryogenic operation. Key performance metrics such as access latency, read/write stability, leakage power, retention time, and energy-delay product are systematically evaluated across temperature scaling from room temperature down to cryogenic levels. The benchmarking framework highlights the trade-offs between SRAM and DRAM under extreme conditions, emphasizing the design challenges posed by device variability, leakage suppression, and refresh mechanisms. The results demonstrate that SRAM exhibits superior read/write speed at cryogenic temperatures, while DRAM offers improved density and scalability but suffers from reduced retention without specialized refresh strategies. This analysis provides critical insights into the feasibility of integrating embedded memories in Cryo-CMOS platforms, paving the way for future quantum-classical co-processing architectures.},
        keywords = {Cryo-CMOS, 40nm CMOS technology, embedded memory, SRAM, DRAM, cryogenic operation, performance benchmarking, memory stability, leakage power, retention time, quantum computing, energy-delay product},
        month = {September},
        }